| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca0d0906229071aa1009c999fced2187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b7245f2219bb76d3099dc908d8827f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4eed87b6599fbf11024299bf8579f8c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de385f4566a477831b8368a93a9feedf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d927097fb5475b63f1e6462ac0f80348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6b62cf1a2023ddb65146d2102ffebe3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e366c1a08acb26c0033968c1ccf6486d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ca49eb5621e3e7db268ec00ba17c96c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-18 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2010-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe0d2bfebad66c49b3cff2408fdceef4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ed5eed839b4be964891b38ef7cfbcf4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83eb4199f39937b07ed7dc9e0b532ab3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b22bf3ca854eea2c751dcb84167491c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9016a22b465d357aa1d195f20a8959d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd9f912408f997af4925a38afcd9a3b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab43d7ee4a5c43a746e47d33092e4b7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6692a9fff658ac7501db0545dfbf5c8 |
| publicationDate |
2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8619828-B2 |
| titleOfInvention |
Group III nitride semiconductor laser diode |
| abstract |
A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising In x1 Ga 1-x1 N (0≦x1<1) and a second layer comprising In x2 Ga 1-x2 N (x1<x2<1). The second layer is provided between the first layer and the active layer. The total thickness of the first layer and the second layer is greater than 0.1 μm. The wavelength of laser light is in a range of 480 nm to 550 nm. |
| priorityDate |
2009-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |