| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df78b86141eea658a93d0f5626ad803f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbc4572209c7b2ab271a2a9b84c6ba67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7343a2d9b29e818a63bf3a239a52718a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dc5778523c7700f9db547075898633c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e3c4806e1dea573c3b06553b730ab36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a55b4ffc998ab5da985c9f5da9d11d6c |
| publicationDate |
2013-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8614480-B2 |
| titleOfInvention |
Power MOSFET with integrated gate resistor and diode-connected MOSFET |
| abstract |
A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728580-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403623-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014334522-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566324-B2 |
| priorityDate |
2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |