http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8604562-B2

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filingDate 2012-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33813c3c7f73b95608779f0b230e877f
publicationDate 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8604562-B2
titleOfInvention Post CMP planarization by cluster ion beam etch
abstract The embodiments of mechanisms described enables improved planarity of substrates, which is crucial for patterning and device yield improvement. Chemical-mechanical polishing (CMP) is used to remove film to planarize the substrate before the final thickness is reached or before all removal film is polished. The substrate is then measured for its topography and film thickness. The topography and thickness data are used by the gas cluster ion beam (GCIB) etch tool to determine how much film to remove on a particular location. GCIB etch enables removal of final layer to meet the requirements of substrate uniformity and thickness target. The mechanisms enable improved planarity to meet the requirement of advanced processing technologies.
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