http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8604551-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dfb3425c813d8af7d6fcd9659ea2ba5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f85d110e8f137961f1f3189ae3e9df4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc4f6247d30bc83357c937b39f191c4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd61c1367d816ac1d581a3ed20efb281 |
| publicationDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8604551-B2 |
| titleOfInvention | Semiconductor device including trenches having particular structures |
| abstract | A semiconductor device includes a substrate, a first region and a second region. Each of the first region and second region includes a trench, an epitaxial layer including a source/drain having a first part and a second part, the first part extending from a top surface of the substrate to a top surface of the source/drain and the second part extending from the top surface of the substrate to a bottom surface of the source/drain in the trench. The cross-sectional shape of the first part of the source/drain of the first region is the same as the cross-sectional shape of the first part of the source/drain of the second region. The cross-sectional shape of the second past of the source/drain of the find region is different from the cross-sectional shape of the second part of the source/drain of the second region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9240482-B2 |
| priorityDate | 2010-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.