| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f4e2b777b1453b4137c169269f40e87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf51fddc5d49f8f82899d45e4bcfdb73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e6b3d78746b3ccc839fcb96db3264ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cea8dbe61b43fd71e0c4025d95ea862d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ce24cf56c61445c97a17a8aa8eff7e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63c5b7feee61babfe032f3f5b1e80dd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70e687c38792e379a57d6267e3e0772e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb174579cf472d3632be0a748fccbfe3 |
| publicationDate |
2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8592916-B2 |
| titleOfInvention |
Selectively raised source/drain transistor |
| abstract |
A lower raised source/drain region is formed on a planar source/drain region of a planar field effect transistor or a surface of a portion of semiconductor fin adjoining a channel region of a fin field effect transistor. At least one contact-level dielectric material layer is formed and planarized, and a contact via hole extending to the lower raised source/drain region is formed in the at least one contact-level dielectric material layer. An upper raised source/drain region is formed on a top surface of the lower raised source/drain region. A metal semiconductor alloy portion and a contact via structure are formed within the contact via hole. Formation of the upper raised source/drain region is limited to a bottom portion of the contact via hole, thereby preventing formation of, and increase of parasitic capacitance by, any additional raised structure in source/drain regions that are not contacted. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016035857-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015206945-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090392-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11088033-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11062956-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018068903-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10685888-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716160-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347739-B2 |
| priorityDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |