http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8592229-B2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c58c8a8d2b9482153c887a0d1dd6454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79adbb497d0e3f6d7a15e9d35b4a3394 |
publicationDate | 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-8592229-B2 |
titleOfInvention | Method for forming dual damascene structure |
abstract | A method for forming a dual damascene structure is disclosed. First a substrate is provided. There are an etching stop layer and an interlayer dielectric layer disposed on the substrate in order. The interlayer dielectric layer has a thickness A. Second, the interlayer dielectric layer is patterned to form a first opening. Later, a photo resist layer with a thickness B is formed on the interlayer dielectric layer. Then, the photo resist layer is patterned by a light source to construct a patterned photo resist layer. Later, the interlayer dielectric layer is again patterned by the patterned photo resist to pattern the interlayer dielectric layer to construct a second opening on the first opening by means of a light source and the photo resist layer so as to form a dual damascene structure. The light source has a periodic parameter C so that (A+B)/C≈X/2, where X is an odd number. |
priorityDate | 2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.