| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c733733f9f6b885a0c187cde279713b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e565b6678873d9f256e8fec9ada071ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f636128994cc84bddc9cb13dcc5613b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ccdc42f5637185d4e0cf2d4a6efbce0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 |
| filingDate |
2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dde2b7554b92e36693b6675e732cf293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34ac070b70e1afb8f99801a4e96aa0d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4160e5941eb730ea3ed96df78fadeaf1 |
| publicationDate |
2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8586995-B2 |
| titleOfInvention |
Semiconductor element having high breakdown voltage |
| abstract |
A semiconductor element having a high breakdown voltage includes a substrate, a buffer layer, a semiconductor composite layer and a bias electrode. The buffer layer disposed on the substrate includes a high edge dislocation defect density area. The semiconductor composite layer disposed on the buffer layer includes a second high edge dislocation defect density area formed due to the first high edge dislocation defect density area. The bias electrode is disposed on the semiconductor composite layer. A virtual gate effect of defect energy level capturing electrons is generated due to the first and second high edge dislocation defect density areas, such that an extended depletion region expanded from the bias electrode is formed at the semiconductor composite layer. When the bias electrode receives a reverse bias, the extended depletion region reduces a leakage current and increases the breakdown voltage of the semiconductor element. |
| priorityDate |
2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |