| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49f04b1dc6b9fcc2d8b159c5ebee364b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2beec868679e9dcafbf35a516887411d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2489c875a3b7df35ea2cb379297278 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B21-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B11-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B7-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B21-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B21-248 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B21-00 |
| filingDate |
2008-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad697bfb542d16f5d9f25509b8a212c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47424be186f818072c4dbbd6bfa35b0c |
| publicationDate |
2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8582202-B2 |
| titleOfInvention |
Observing device and method |
| abstract |
When it is detected that a solid immersion lens comes into contact with the semiconductor device, the lens is caused to vibrate by a vibration generator unit. Next, a reflected light image from the lens is input to calculate a reflected light quantity of the reflected light image, and it is judged whether a ratio of the reflected light quantity to an incident light quantity is not greater than a threshold value. When the ratio is greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is not achieved, and the lens is again caused to vibrate. When the ratio is not greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is achieved, and an observed image of the semiconductor device is acquired. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11284000-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9477073-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015109682-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019394400-A1 |
| priorityDate |
2007-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |