http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8581274-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d13197ee7d30de4694273f0b85a78456 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05644 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05666 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 |
| filingDate | 2007-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1439837dd2ac4f31c4b8afefeca136e4 |
| publicationDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8581274-B2 |
| titleOfInvention | Integrated semiconductor light-emitting device and its manufacturing method |
| abstract | An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978615-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012104355-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446391-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9976709-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10781982-B2 |
| priorityDate | 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.