http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8580099-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bbdc68ca0aa38fef2d059853ef2b31e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a2206ee4f4b248cf8cd5c8fc7023674 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B03C5-02 |
| filingDate | 2011-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08f8891251398a342580a24676ea00b3 |
| publicationDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8580099-B2 |
| titleOfInvention | InN nanowire based multifunctional nanocantilever sensors |
| abstract | Sensor are generally provided that include a layer of silicon oxide on a portion of a n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer. First and second metal contacts can be on the layer of silicon oxide, with first and second nanowires extending respectively from a first base on the first metal contact and a second base on the second metal contact. The first nanowire and the second nanowire are connected together at an apex to form a v-shaped nanocantilever, wherein the apex is positioned over the exposed n+ layer, and wherein the nanowires comprise indium and nitrogen. Methods of fabricating such sensors, along with methods of their use, are also generally provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10900927-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10191004-B2 |
| priorityDate | 2010-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.