| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2ab7a2b8eace14c15033b51c17ee6337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_92cae14d480d076be12df8793a21d9fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a74f11d96ed5dbdff563e995692305a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_09eebadfc55af18352f46529feefb647 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f4aef22a1682f6a7f5de69b9e2c8caf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdd413420adf9e372a0ee37614a4f8e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47b6589ab602df44d498b39bb1e93b8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_846e022d91478a352f52f0cb5c6982b0 |
| publicationDate |
2013-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8569154-B2 |
| titleOfInvention |
Three dimensional integration and methods of through silicon via creation |
| abstract |
A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a sacrificial substrate layer, etching to the exposed first planar area to form a cavity having a first depth in the structure, removing a portion of the photoresist to increase the size of the opening to define a second planar area on the sacrificial substrate layer, forming a doped portion in the sacrificial substrate layer, and etching the cavity to increase the depth of the cavity to expose a first conductor in the structure and to increase the planar area and depth of a portion of the cavity to expose a second conductor in the structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8970011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014124954-A1 |
| priorityDate |
2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |