| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d12151714492852cbc6ef3ce6d79bff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51ea83920fa687e50007860670ffd5ef |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-621 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| filingDate |
2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_668c0cb75482a0370ce325dac444f3ae |
| publicationDate |
2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8546179-B2 |
| titleOfInvention |
Method of fabricating a self-aligned top-gate organic transistor |
| abstract |
A method of fabricating a self-aligned top-gate organic transistor comprises depositing a photoresist material over the dielectric material, and exposing the photoresist material to irradiation through the substrate using the source and drain electrodes as a mask. The exposure defines a region for deposition of the gate electrode. |
| priorityDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |