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filingDate 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8543742-B2
titleOfInvention Flash-memory device with RAID-type controller
abstract A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9405480-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11016846-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016124640-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9672124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10082961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016364141-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10824340-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9286209-B2
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