| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f6d2d1d08695f309676989350ce8307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81ca9a5f1da06521982d5a6b55b04244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c5aeec89642080f8ca5b57e205ac83f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b35e677819f43a96bc0deede854253e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7bfdac5e9641ec5260cd605d227ad3a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2011-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c4aacbaa0f638e4949db2391c47db55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48bca3e9f18a806ff9b8bd1be0673fd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b22571a36113f9fe5c27f1d1210bb12f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7dd73bcbaef7bec43be77efc8cb3ccb |
| publicationDate |
2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8541307-B2 |
| titleOfInvention |
Treatment method for reducing particles in dual damascene silicon nitride process |
| abstract |
A treatment method for reducing particles in a Dual Damascene Silicon Nitride (DDSN) process, including the following steps: forming a seed layer of copper on a silicon wafer; depositing a deposition layer of copper to cover the seed layer of copper; planarizing the deposition layer of copper; providing the silicon wafer into a reaction chamber and performing a pre-treatment on a surface of the deposition layer of copper using NH 3 gas under a plasma condition so as to reduce copper oxide (CuO) to copper (Cu) formed on the deposition layer of copper; in the reaction chamber, generating an etching block layer on the deposition layer of copper using a DDSN deposition process; cleaning the reaction chamber using NF 3 gas; and directing N 2 O gas into the reaction chamber and removing the remaining hydrogen (H) and fluorine (F) in the reaction chamber using the N 2 O gas under the plasma condition. |
| priorityDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |