| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54c7da231c96d9edab65d3c0b9d39145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f01f37bc92215f2fae50c055754fcbdf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b7d0878b597753f8c3a80fc1fe7796 |
| publicationDate |
2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8530313-B2 |
| titleOfInvention |
Method of manufacturing trench MOSFET structures using three masks process |
| abstract |
In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and following with a dry oxide etching to remove the contact insulation layer from contact open areas. The silicon layer is implanted with a source dopant through the contact open areas and the source dopant is diffused to form source regions, thereby a source mask is saved. A dry silicon etch is carried out to form trenched source-body contacts in the contact open areas, penetrating through the source regions and extending into the body regions. |
| priorityDate |
2009-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |