| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2b89f973867f67bb52fb62c3ee56ceb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8de42e629231a36fec5161df86210448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcfe1e0bc07d94986e76bb0a02d5eb0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71887709dd9dbd98c0d26e7b9b1010f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4be7c7ca20aebdf8d345b55f7292fb35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2534210c51a7b10428c43b7495e773a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a438f7d9be64057a96f065caab5eaa2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41c1f887184becd7f6c1fb56ce9ca207 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2011-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62acd788b12d54720ba991562f158a1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_058a6b7376989b3fd71805573ee39ad7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146bceb01c56df7bd36dc0e403980f40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_600530a7f21a125f0ee7e89e25241409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b67105af07fc8f74d554147aac740c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7198be23df6636835cd390c052dbad2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_138040e9647833aa06feb716f73b1fc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fcacb57f851ef7f1c905a2844295da5 |
| publicationDate |
2013-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8524615-B2 |
| titleOfInvention |
Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer |
| abstract |
Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer. |
| priorityDate |
2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |