| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79799e6646c6a1697e369a8555496f76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e8fc69a59e38ca9fa49f128aeb516bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41669c1ed51a58116783d8a1ab86b2a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf41ccc832508a9a79a1dfb52be06c8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c637a49718ab7434a48de0947b26a231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6869749fb90dbedcd620b1a5bf58cac0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4882bdfa7264162d06fcfada7d8f7d26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_350763e48ba9f9e3c09ce2b10617677d |
| publicationDate |
2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8519541-B2 |
| titleOfInvention |
Semiconductor device having plural conductive layers disposed within dielectric layer |
| abstract |
A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An opening is provided within the dielectric layer by removing a portion of the dielectric layer. A conformal first conductive layer is formed over the dielectric layer and the opening. A conformal second conductive layer is formed over the first conductive layer. A conformal barrier layer is formed over the second conductive layer. |
| priorityDate |
2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |