| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbd4ad4fc5bac5557f9b98cffe786fac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b192434ddff4fa8f6fd3453682885cc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7ecce5d2fbc9692c16597636bb5808f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1223c989f2f68bcd4e684b648d1bde2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22bc8c33c0cbf3e24e7891617033f1b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62b7eeb346f01a2db3906afe04ca4769
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d2bb382a7a0405f6aa74e12af21654c |
| publicationDate |
2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8519416-B2 |
| titleOfInvention |
Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device |
| abstract |
A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate. |
| priorityDate |
2006-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |