| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_025fc7b7318906b9ede0b5fa9dd0b39a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_facf9ff07049bb2493ae7e83f77c0db2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3dbcd43f751b7ca43f68ca76e0251fba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe8da4d89f669ca6672bcae5959e65f2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18313 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate |
2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d63984882d8e28af840f26acf52bbdb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42689c054e53efe9bb5b0c58bfdb1bba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_632f38a057811cc5c4ee6a5f23731bc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4fc1921960363a6210c10e7123e9608 |
| publicationDate |
2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8488647-B2 |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812609-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018047872-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018070423-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978909-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10178736-B2 |
| priorityDate |
2009-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |