| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75bc855ed2ab6e3d1f9e91b410c0c286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa8eec7286fe84710915dc0254c606c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e724e0a99311dfbb69ce6339d75269b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0825ff783a706a6eae5a1c2df76b12b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e50a0c33931d62a4fb3ebd1b0115b18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ae3b456001916978d2245845b168087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fadcae3196ca725b795713aa49cd9f1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L47-00 |
| filingDate |
2009-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_972551c9823b3547794caf4af6a4f6ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44d8b08fd92a7bc644de1fe31cf8db89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50f155f03ebda9674a8c88d1aee1d523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1ba8833596f3809b65a091d6f06beb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d8242978e4287a721946ae169e05e4b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecd23c80fa59fc198d3586d559003e7b |
| publicationDate |
2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8487291-B2 |
| titleOfInvention |
Programmable metallization memory cell with layered solid electrolyte structure |
| abstract |
Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170224-B2 |
| priorityDate |
2009-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |