| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10377a8a1e4c5be9dd7508adeb577535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242f9943073f72a7e5ebaf173662f5b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6069f3347aa3ca0c73a10847e9962c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38762496e621cbbad35d293df3edf24c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c092b05f4e7a0d9c055142a5769d1dea |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61H39-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B43K23-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B43K25-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B43K29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0485b74bc6c69dd53b82f4ed43d5f8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f855015f38d11b5393aa0b1391232d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fe78b924f8889dc71c8ae1327e920aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73dc2027a36d8bfc2a43db2f26e34e9c |
| publicationDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8461628-B2 |
| titleOfInvention |
MOS transistor with laser-patterned metal gate, and method for making the same |
| abstract |
A MOS transistor with a laser-patterned metal gate, and methods for its manufacture. The method generally includes forming a layer of metal-containing material on a dielectric film, wherein the dielectric film is on an electrically functional substrate comprising an inorganic semiconductor; laser patterning a metal gate from the metal-containing material layer; and forming source and drain terminals in the inorganic semiconductor in locations adjacent to the metal gate. The transistor generally includes an electrically functional substrate; a dielectric film on at least portions of the electrically functional substrate; a laser patterned metal gate on the dielectric film; and source and drain terminals comprising a doped inorganic semiconductor layer adjacent to the metal gate. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910495-B2 |
| priorityDate |
2005-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |