| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57ddfa59a587674e394a29d690d3b32a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9854cddd992f6f417185a12f89f8ce95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16c73dda283d9cc521f7702d4a530a72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_feddfc4d830c0477cc1dd7cfb289bc38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4326824fdddaf5945031630606d94f52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a23e129f7bd01270da0b63824047b7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da4bf9fa9f5f65da8cd168db258c9614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6ff226d17ff833aa5a1992f9c251327 |
| publicationDate |
2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8455420-B2 |
| titleOfInvention |
Spin-on formulation and method for stripping an ion implanted photoresist |
| abstract |
A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist. |
| priorityDate |
2009-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |