| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e25acb35d6b58dda5312fb8f21a56fa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2e85637ee8054cd62ff67ffb457b2cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35a3b837d325df3a2b339da19354831c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8b7ce0a5e2290deb9b124ef4412f33c8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2010-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fffc13903763f241fcdadfba7ed0bf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce3e3796a2b6b9c1f43f684457a061ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e0ee9ad08da98b46ae8fa2764bc95ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5847eae1f7b8475ada15207bc38dc1cc |
| publicationDate |
2013-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8450834-B2 |
| titleOfInvention |
Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers |
| abstract |
This disclosure relates to a spacer structure of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate structure that has a sidewall overlying the substrate; a silicide region in the substrate on one side of the gate structure having an inner edge closest to the gate structure; a first oxygen-sealing layer adjoining the sidewall of the gate structure; an oxygen-containing layer adjoining the first oxygen-sealing layer on the sidewall and further including a portion extending over the substrate; and a second oxygen-sealing layer adjoining the oxygen-containing layer and extending over the portion of the oxygen-containing layer over the substrate, wherein an outer edge of the second oxygen-sealing layer is offset from the inner edge of the silicide region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859225-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022328306-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937891-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016336214-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991662-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837362-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991661-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249576-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249575-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020176398-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10665552-B2 |
| priorityDate |
2010-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |