| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59424078bf19bb2e84bb9d0bfcaaa5e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df16ca82427b90e433a0ae5012b6052b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_179d50e7784890810aaafd99d336e633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e4555ef38c83025060d9c1264822456 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9bbbfb02e5ca934c92ab258a44cc57b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de8b5f9b0e0dc290fe0332948b31197b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bc1aea457e057a26d5121f205870ee1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d57ac9097124e24be1970448403b3ca |
| publicationDate |
2013-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8450169-B2 |
| titleOfInvention |
Replacement metal gate structures providing independent control on work function and gate leakage current |
| abstract |
The thickness and composition of a gate dielectric can be selected for different types of field effect transistors through a planar high dielectric constant material portion, which can be provided only for selected types of field effect transistors. Further, the work function of field effect transistors can be tuned independent of selection of the material stack for the gate dielectric. A stack of a barrier metal layer and a first-type work function metal layer is deposited on a gate dielectric layer within recessed gate cavities after removal of disposable gate material portions. After patterning the first-type work function metal layer, a second-type work function metal layer is deposited directly on the barrier metal layer in the regions of the second type field effect transistor. A conductive material fills the gate cavities, and a subsequent planarization process forms dual work function metal gate structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014299939-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11063039-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015035026-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013005156-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106960818-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9087886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108281385-A |
| priorityDate |
2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |