| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e70c0aeade92d7571d955d3b90ea06e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d500f364b558420f1f6b7260912b38db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_062d9f3863e7080a8cb6000ec6e338d7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G19-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G17-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B19-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B17-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-00 |
| filingDate |
2010-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_add62970738cfa89689656f8ea29f915
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a286f8f502214289ebe0b5be23d2d61c |
| publicationDate |
2013-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8449859-B2 |
| titleOfInvention |
Syntheses of quaternary chalcogenides in cesium, rubidium, barium and lanthanum containing fluxes |
| abstract |
The present invention relates to syntheses of quaternary chalcogenide compounds such as copper zinc tin sulfide in cesium, rubidium, barium and lanthanum containing fluxes. The quaternary chalcogenides are useful as the absorber layer as a p-type semiconductor in a thin film solar cell application. |
| priorityDate |
2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |