http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8445166-B2

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filingDate 2008-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dce211560f6f946990d4c4bbe3dee7ef
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publicationDate 2013-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8445166-B2
titleOfInvention Fabrication method of lithography mask and formation method of fine pattern using the same
abstract There is provided a method of fabricating a lithography mask, the method including: forming a transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed; separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereonto; depositing a metal thin film on the convex-concave surface; forming a viscous film on a second substrate; disposing the transparent polymer layer on the second substrate such that the viscous film and metal thin film are partially bonded together; and separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the viscous film is removed, wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface.
priorityDate 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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