| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42b06218460a979fbdebed348e7f6578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_45fe70967367ad89683129c650c1487a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 |
| filingDate |
2011-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1223344757e7c20ec540023741f19d0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6722578d3c25cb0bc4e1bef1db720bd3 |
| publicationDate |
2013-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8436363-B2 |
| titleOfInvention |
Metallic carrier for layer transfer and methods for forming the same |
| abstract |
Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and a residual donor structure between the weakened zone and a surface opposite the attachment surface. A metallic layer is formed on the attachment surface and provides an ohmic contact between the metallic layer and the transfer layer, a matched Coefficient of Thermal Expansion (CTE) for the metallic layer that closely matches a CTE of the transfer layer, and sufficient stiffness to provide structural support to the transfer layer. The transfer layer is separated from the donor structure at the weakened zone to form a composite substrate comprising the transfer layer the metallic layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013161636-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3121275-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022189732-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761671-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022200712-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142412-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021105575-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021250333-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3108774-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3111232-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3120737-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3120736-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3103961-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3108775-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3103962-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3121281-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022189733-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021019137-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021191512-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021191511-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3099637-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021105576-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013161637-A1 |
| priorityDate |
2011-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |