| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb138c98045f39e9b20bded9a3934a09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59424078bf19bb2e84bb9d0bfcaaa5e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5444abb6d0554bfd30bf426da437809c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b702e212202af6835d9bbccf928fe616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7caa17db9289ccb6a1187245dc8000cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c63b86c4bed7caf34f2bd01f2d75da33 |
| publicationDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8426300-B2 |
| titleOfInvention |
Self-aligned contact for replacement gate devices |
| abstract |
A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over the planarization dielectric layer and the top surface of the replacement gate stack so that the top surface of a portion of the dielectric capping layer over the replacement gate stack is vertically recessed relative to another portion of the dielectric layer above the planarization dielectric layer. The vertical offset of the dielectric capping layer can be employed in conjunction with selective via etch processes to form a self-aligned contact structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014217481-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8937006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9368590-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9105624-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014030880-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536983-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600882-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013154012-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106158967-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106158967-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017077257-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9269786-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013175619-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013178052-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10516052-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019259753-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9041076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263113-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104241359-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868188-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9024393-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013189834-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013056836-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840139-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589828-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929271-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013328112-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018076198-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9576959-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312236-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8936979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763254-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8847333-B2 |
| priorityDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |