| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_924957eb7a090acc4d80069f34d51719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb4e37f1ee48e6f1956f2aedaeedc2f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0689b96f266c908abfb0f8ff0e34eb6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51f6ddd2f889f9b9506f872c76aa04d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-82 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2011-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04bd7d85dfb9b9be4bcc18019eb9c24e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c1abd34753359beb5de28891e3843c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd48bd375c80d83a6b4c22d8104ae5b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe45fdd5fe43ce13c70356359cf4870c |
| publicationDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8426286-B2 |
| titleOfInvention |
Method and device for a DRAM capacitor having low depletion ratio |
| abstract |
A method of manufacturing a semiconductor integrated circuit device having low depletion ratio capacitor comprising: forming hemispherical grains (HSG) on a poly-silicon; doping the hemispherical grained polysilicon in a phosphine gas; and rapid thermal oxidizing the doped hemispherical grained polysilicon at 850° C. for 10 seconds. The method further comprises nitridizing the rapid thermal oxidized hemispherical-grained polysilicon and depositing a alumina film on the silicon nitride layer. A semiconductor integrated circuit device having a low depletion ratio capacitor according to the disclosed manufacturing method is provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8742542-B2 |
| priorityDate |
2010-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |