| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0c15889bb44b7dc77de5fee6fa8ec94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2e169c273fda6959835b68c868d9509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3be79a075f9ec4ad0442aecf80c4e706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6394f01abe6ee423f52258f7504df9d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P80-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2011-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fbde5423210c470ac164fe791c71fc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b78a1fdb86c8c5ad0403b8531981d398
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_611b00e3e816eb6718eb65649b4fe164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d4b99bfc5edf4e6932d348523f3e8f1 |
| publicationDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8421166-B2 |
| titleOfInvention |
Semiconductor device and fabrication thereof |
| abstract |
A method for forming a semiconductor device is disclosed. A substrate including a gate dielectric layer and a gate electrode layer sequentially formed thereon is provided. An offset spacer is formed on sidewalls of the gate dielectric layer and the gate electrode layer. A carbon spacer is formed on a sidewall of the offset spacer, and the carbon spacer is then removed. The substrate is implanted to form a lightly doped region using the gate electrode layer and the offset spacer as a mask. The method may also include providing a substrate having a gate dielectric layer and a gate electrode layer sequentially formed thereon. A liner layer is formed on sidewalls of the gate electrode layer and on the substrate. A carbon spacer is formed on a portion of the liner layer adjacent the sidewall of the gate electrode layer. A main spacer is formed on a sidewall of the carbon spacer. The carbon spacer is removed to form an opening between the liner layer and the main spacer. The opening is sealed by a sealing layer to form an air gap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018047895-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559655-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786767-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529826-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11227993-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10021298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10062604-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453934-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510884-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10178309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017194423-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735047-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9305835-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484250-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014217545-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189707-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8822335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8941157-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999837-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770566-B2 |
| priorityDate |
2007-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |