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filingDate 2010-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf782aea314c58420b0d82260afdee73
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publicationDate 2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8421056-B2
titleOfInvention Light-emitting device epitaxial wafer and light-emitting device
abstract A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.
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priorityDate 2009-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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