| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42076b07d326545598cab4afb5cddd90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e25efb49bbf4a6b968bd9c7f50eec72c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_806353b5c9f94e8438231ae44459172f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2011-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e94558ad584d65d7adac72b81fad726
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_902bec777f0d87d5031dc6db61d11997
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_795ccc6ef23a576c1c72d9c864c2b517 |
| publicationDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8420545-B2 |
| titleOfInvention |
Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures |
| abstract |
The present invention relates to a plasma etching method and apparatus for preparing high-aspect-ratio structures. The method includes the steps of placing the substrate into a plasma etching apparatus, wherein the plasma etching apparatus includes an upper electrode plate and a lower electrode plate; continuously supplying an upper source RF power and a DC power to the upper electrode plate; and discontinuously supplying a bias RF power to the lower electrode plate. When the bias RF power is switched to the off state, a large amount of secondary electrons pass through the bulk plasma and reach the substrate to neutralize the positive ions during the duration time of the off state (T off ). |
| priorityDate |
2011-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |