| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f68fe161b7683c1e2c7c6dc1443a09bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7fbf2dfc9692342b503c51638280856e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2727eeff4e4ea0b3bf9e961447c76ef1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5902e57ebcb83a2ea40cfb1c08220920 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L7-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2300-1827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2300-0636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2300-0645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2300-0816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2200-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L3-502707
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00047 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2010-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e181cccbae9c274e84dce71268420fc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddbefb57e7934a00672932f8a61b043e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e01f7ef37791af2977691cd799ab831f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dece099547ac775b14d154a3618ac0cf |
| publicationDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8420428-B2 |
| titleOfInvention |
Method for forming buried cavities within a semiconductor body, and semiconductor body thus made |
| abstract |
A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170304-B1 |
| priorityDate |
2005-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |