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filingDate 2007-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8415186-B2
titleOfInvention Method of super flat chemical mechanical polishing technology and semiconductor elements produced thereof
abstract The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.
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priorityDate 2007-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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