http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8409965-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
filingDate 2011-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4cada6de6e8b695f798f6b0e3a2e834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6686ad580ce70a222afe42faa0a2341
publicationDate 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8409965-B2
titleOfInvention Method and structure for LED with nano-patterned substrate
abstract The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.
priorityDate 2011-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.