| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_870b2b297aa0b41807e6f385fb4b31b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a0252a65910c86d553d68ed3e5ec29f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2980db71fb65be7853c2bdfae74320ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18031b2d9d132e5e16c042f882999e58 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34 |
| filingDate |
2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14ffa32600269c278ae9c6e876a83460
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0be0745d1b80606881881f957ee4ea2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72c40638488dc2f60058dac11962b0a6 |
| publicationDate |
2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8406063-B2 |
| titleOfInvention |
Programming non-volatile storage with synchonized coupling |
| abstract |
A process for programming non-volatile storage is able to achieve faster programming speeds and/or more accurate programming through synchronized coupling of neighboring word lines. The process for programming includes raising voltages for a set of word lines connected a group of connected non-volatile storage elements. The set of word lines include a selected word line, unselected word lines that are adjacent to the selected word line and other unselected word lines. After raising voltages for the set of word lines, the process includes raising the selected word line to a program voltage and raising the unselected word lines that are adjacent to the selected word line to one or more voltage levels concurrently with the raising the selected word line to the program voltage. The program voltage causes at least one of the non-volatile storage elements to experience programming. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016267990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406383-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11468954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9460795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9767908-B2 |
| priorityDate |
2010-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |