| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39cb5d3683ce5a8229480f0198f1bdf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94b20b6f022d96f3fcec94428bce9c67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d758ab0cd9df088eed552cead1123eb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_05d0c9a4028d0a5d8dee53e3785bb79c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 |
| filingDate |
2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc82e3105fd45a61899ee51cbf96a01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f6f4a98006ec63f24b4d271b51b4f8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42572e9717671c54e54ed2b4fc6fd54f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b366361a164ee5f78bb4acf27c3d87b4 |
| publicationDate |
2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8405192-B2 |
| titleOfInvention |
Low dielectric constant material |
| abstract |
The present disclosure provides a dielectric material including a low dielectric constant material and an additive. The additive includes a compound having a Si—X—Si bridge, where X is a number of carbon atoms between 1 and 8. The additive may include terminal Si—CH 3 groups. The dielectric material including the additive may be used as an inter-layer dielectric (ILD) layer of a semiconductor device. The dielectric material including the additive may be formed using a CVD or sol-gel process. One example of the additive is bis(triethoxysilyl)ethene. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9330989-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079283-B2 |
| priorityDate |
2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |