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filingDate 2010-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8399358-B2
titleOfInvention Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment
abstract Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.
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