| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_535e95972efb122b574bc3ac8b7cebf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_87e9073fb94f6bc4b409dd3602f73e80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdc63f361c8d004853571980444c29fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f02ade48f728217837ad9d0dd10edf66 |
| publicationDate |
2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8395187-B2 |
| titleOfInvention |
Compound semiconductor epitaxial substrate and manufacturing method thereof |
| abstract |
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015024601-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987141-B2 |
| priorityDate |
2003-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |