Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5ec89a17f3de953b6b0f8b5b461198c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc675cd694fc7aa6811581a2f9f92003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_07e997255e47f0d0c2353778aef646c2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
filingDate |
2010-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fecadae96696fe7c13188637a278a74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b949362cf650f55b0bee5b4c5f3d86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5527d8bdb0fa053368d7195a5ecf83a0 |
publicationDate |
2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8394666-B2 |
titleOfInvention |
Organic memory devices and methods of fabricating such devices |
abstract |
Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10424743-B2 |
priorityDate |
2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |