http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8389320-B2

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
filingDate 2008-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_885f1500f9f53f3a870d79660f5b5ee4
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publicationDate 2013-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8389320-B2
titleOfInvention Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
abstract In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1 , and the semiconductor substrate 1 is bent along the dividing grooves 8 , whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513047-B2
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priorityDate 2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.