| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca526b3557dd3dfd21e41d038ac9e79b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d8eba6e1811e9d575fe6247ce95e2e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0bca4bac5edd321c9f72b52606198db1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2010-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e6a554ade568308307ca4db99ef50be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d93c03887e803158fa0ca733395b69b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81cfe2f8b7241116f0fc365491761ccb |
| publicationDate |
2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8384187-B2 |
| titleOfInvention |
Semiconductor device with shallow trench isolation |
| abstract |
To provide a semiconductor device provided with an element isolation structure capable of hindering an adverse effect on electric characteristics of a semiconductor element, and a method of manufacturing the same. The thickness of a first silicon oxide film left in a shallow trench isolation having a relatively narrow width is thinner than the first silicon oxide film left in a shallow trench isolation having a relatively wide width. A second silicon oxide film (an upper layer) having a relatively high compressive stress by an HDP-CVD method is more thickly laminated over the first silicon oxide film in a lower layer by a thinned thickness of the first silicon oxide film. The compressive stress of an element isolation oxide film finally formed in a shallow trench isolation having a relatively narrow width is more enhanced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018096992-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985021-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9419015-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9824934-B1 |
| priorityDate |
2009-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |