| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca8c8ca78802e2ba9e97cfc5faf3e883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f829b1cb3bdffe69db07a17b0a2a4274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4113b19a81d055d7baa22324fd3050cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69d1c6afe1e94310efecb50b9afa73eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 |
| filingDate |
2010-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_304354afe39043a8de8dfb054b7541d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0eb6f8e6774eb3e7eaa5b110a0a2ad6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf3fd8c61158fb0e744188bd59f8e8ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76ce6daa286f19d28343df6fae78c302 |
| publicationDate |
2013-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8377212-B2 |
| titleOfInvention |
Chamber, device and method for annealing a semi-conductor material of II-VI type |
| abstract |
A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently. |
| priorityDate |
2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |