| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e1500be5eb6135e108a2bad4c005601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_825eb122ab7f45de8322ecd850e51bee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a86ca3df087dedeb90e2eacf52a214a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb11c8dcf8ef9b6c8b9b8a3f73668310 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2007-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e1866dfdeddad878b17f33775542c01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df2d1f1d3850316a534365ab8a15ce3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87540e9051289b8f31ce3bb5bf54564d |
| publicationDate |
2013-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8373148-B2 |
| titleOfInvention |
Memory device with improved performance |
| abstract |
The present resistive memory device includes first and second electrodes. An active layer is situated between the first and second electrodes. The active layer with advantage has a thermal conductivity of 0.02 W/Kcm or less, and is surrounded by a body in contact with the layer, the body having a thermal conductivity of 0.01 W/Kcm or less. |
| priorityDate |
2007-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |