Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02168214e43f0a563f3f344683cf2e68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e216b97751699f25a2d4674b455d70e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f77815c0b4472b125f579962a4c8b17 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D209-88 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
filingDate |
2011-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9239159be1545fdb13200ae14c137a4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30b87c49698dc01dd458a708fd1261ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c99f42ed35f80299587061a084a2001 |
publicationDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8362474-B2 |
titleOfInvention |
Organic field effect transistor and semiconductor device |
abstract |
It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013084595-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010140623-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239332-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8729537-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796678-B2 |
priorityDate |
2006-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |