| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b06bf8b3c3c6183336041ec9846b0f66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_26cb0fac127a3d151c62636fdb9d06ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f44ff4f7711e4100263bcb7cdb7044f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b95c58af0c6c7ea48dbc5a5b7718691 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G79-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08C2-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G79-08 |
| filingDate |
2009-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c50622a968e4e6ec7580a5739e64174f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67af6094fb3d0af6165ca954feb9241f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08de26116af323d415bab1f5bc318748
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8d9621d0f4d0c5b8dc37c4b5e6ae6af |
| publicationDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8362199-B2 |
| titleOfInvention |
Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation |
| abstract |
Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8 C formed on a silicon wafer 1 . The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10 −8 A/cm 2 . |
| priorityDate |
2002-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |