| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0986adbacd8a0360fc6da65284a87501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_032a4266edd99887141290dbe6fe1505 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2010-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67a88e51df2af8de355c90bd3b563ea8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_059ad1d645a9f0a404193971f96e2045 |
| publicationDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8361848-B2 |
| titleOfInvention |
Precise resistor on a semiconductor device |
| abstract |
A method includes forming a polysilicon layer on a substrate; and patterning the polysilicon layer to form a polysilicon resistor and a polysilicon gate. A first ion implantation is performed on the polysilicon resistor to adjust electric resistance of the polysilicon resistor. A second ion implantation is performed on a top portion of the polysilicon resistor such that the top portion of the polysilicon resistor has an enhanced etch resistance. An etch process is then used to remove the polysilicon gate while the polysilicon resistor is protected by the top portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9117704-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014183657-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012139062-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9984974-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014367793-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090397-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096600-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466521-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9171839-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013119480-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012129312-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015111361-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492286-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8481415-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9281356-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867912-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887189-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9240404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899322-B2 |
| priorityDate |
2010-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |