| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bb1ac0effc475b4465efef5039e8c3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c7cde489cea141192b12691ec30643c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_398a7698f0a6e9134a64ff86b9bdca84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_334aee04cc8310d243d3fc88a540ab6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679fc7858d46067382eebecbd83c1596
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 |
| filingDate |
2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ea30c7a4d0bf8051dfc3279b88e36bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_279a8a7002564d9ed0da2933bc535768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25dff423cf172c0891ef5c5f3b6dee2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c98ac89f2fa0800b86cb6b6d0f7ba4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_494b37cddd78f1a633527d17b75c5fbf |
| publicationDate |
2013-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8349746-B2 |
| titleOfInvention |
Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure |
| abstract |
Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole. |
| priorityDate |
2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |