| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e74223c2074320c6a1264ff2783e710
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23d994b3d26382b3031313e93e543007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d68303777d266a3748643b576b2686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66835173d237f4319f0d4e8561ddb0cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f493fd6fdb0c6c5adef5f1b7845df792 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-006 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J27-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61N5-00 |
| filingDate |
2010-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bbf9e3db63f0b1a84d19b7cfaaa4b55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1022a63a36724aef91b6b33dec2d03f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86b12b10c6ab6a915f24dc6095962bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85cb9dfd8838d0de67afd61a0422c495 |
| publicationDate |
2012-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8338806-B2 |
| titleOfInvention |
Gas cluster ion beam system with rapid gas switching apparatus |
| abstract |
A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013226073-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9314603-B2 |
| priorityDate |
2010-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |