| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_995419aea57aa49054eed80e57ed34e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de63d2cb67daf79f418e07b8f04d4f57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate |
2007-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32b5c8a3ec7af77cb60ef273b2513408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd71b4acd81ba93ae4af2874a9b4b998 |
| publicationDate |
2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8334200-B2 |
| titleOfInvention |
Semiconductor light-emitting device, method of manufacturing semiconductor light-emitting device, and lamp |
| abstract |
The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14 ; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14 . The transparent electrode 15 includes a crystallized IZO film. |
| priorityDate |
2006-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |